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| SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 - OCTOBER 1995 FEATURES * Very low RDS(ON) = .33 APPLICATIONS * DC - DC Converters * Solenoids/Relay Drivers for Automotive PARTMARKING DETAIL ZVN4306 ZVN4306G D S D G ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at Tamb=25C Pulsed Drain Current Gate Source Voltage Power Dissipation at Tamb=25C Operating and Storage Temperature Range SYMBOL VDS ID IDM VGS Ptot Tj:Tstg TYP. MAX. VALUE 60 2.1 15 20 3 -55 to +150 UNIT V A A V W C ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current SYMBOL MIN. 60 BVDSS VGS(th) IGSS IDSS 12 0.22 0.32 0.7 350 140 30 8 25 30 16 0.33 0.45 1.3 UNIT CONDITIONS. V ID=1mA, VGS=0V V nA A A A S pF pF pF ns ns ns ns VDD 25V, VGEN=10V, ID=3A ID=1mA, VDS= VGS VGS= 20V, VDS=0V VDS=60V, VGS=0V VDS=48V, VGS=0V, T=125C(2) VDS=10V, VGS=10V VGS=10V, ID=3A VGS=5V, ID=1.5A VDS=25V,ID=3A 3 20 10 100 On-State Drain ID(on) Current(1) Static Drain-Source RDS(on) On-State Resistance (1) Forward Transconductance (1) Input Capacitance (2) Common Source Output Capacitance (2) Reverse Transfer Capacitance (2) Turn-On Delay Time (2)(3) Rise Time (2)(3) Turn-Off Delay Time (2)(3) Fall Time (2)(3) gfs Ciss Coss Crss td(on) tr td(off) tf VDS=25 V, VGS=0V, f=1MHz (1) Measured under pulsed conditions. Width=300s. Duty cycle 2% (2) Sample test. (3) Switching times measured with 50 source impedance and <5ns rise time on a pulse generator Spice parameter data is available upon request for this device 3 - 411 ZVN4306G TYPICAL CHARACTERISTICS 12 11 7V 10 9 8 7 6 5 4 3 2 1 0 0 1 2 3 4 5 6 7 8 9 VGS= 20V 12V 10V 9V 8V RDS(on)-Drain Source On Resistance () VGS=3V 10 3.5V 5V 6V ID - Drain Current (Amps) 6V 1.0 5V 8V 10V 4V 3.5V 3V 10 0.1 0.1 1 10 100 VDS - Drain Source Voltage (Volts) ID-Drain Current (Amps) Saturation Characteristics On-resistance v drain current 2.6 Normalised RDS(on) and VGS(th) 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 -50 -25 n) (o DS 5 gfs-Transconductance (S) VGS=10V ID=3A 4 3 2 1 VDS=10V eR rc ou -S ain Dr a ist es eR nc VGS=VDS ID=1mA Gate Threshold Voltage VGS(TH) 0 25 50 75 100 125 150 175 200 225 0 0 2 4 6 8 10 12 14 16 18 20 Tj-Junction Temperature (C) ID(on)- Drain Current (Amps) Normalised RDS(on) and VGS(th) v Temperature Transconductance v drain current 500 16 VGS-Gate Source Voltage (Volts) 14 12 10 8 6 4 2 0 01 ID=3A VDD= 20V 40V 60V C-Capacitance (pF) 400 300 200 100 0 0 10 20 30 40 50 Ciss Coss Crss 60 70 80 2 3 4 5 6 7 8 9 10 11 12 VDS-Drain Source Voltage (Volts) Q-Charge (nC) Capacitance v drain-source voltage Gate charge v gate-source voltage 3 - 412 |
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